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IRF510 데이터시트(PDF) 1 Page - ARTSCHIP ELECTRONICS CO.,LMITED. |
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IRF510 데이터시트(HTML) 1 Page - ARTSCHIP ELECTRONICS CO.,LMITED. |
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1 / 5 page ![]() IRL510-513 N-Channel Power Mosfets www.artschip.com 1 Description The devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. Low RDS(on) VGS Rated at ±20V Sillcon Gate for Fast Switching Speeds IDSS, VDS(on), Specified at Elevated Temperature Rugged Low Drive Requirements Ease of Parallelling TO-220AB IRF510 IRF511 IRF512 IRF513 MTP4N08 MTP4N10 Maximum Ratings Symbol Characteristic Rating IRF510/512 MTP4N10 Rating MTP4N08 Rating IRF511/513 Unit VDSS Drain to Source Voltage 1 100 80 60 V VDGR Drain to Gate Voltage 1 RGS=20k Ω 100 80 60 V VGS Gate to Source Voltage ±20 ±20 ±20 V TJ, Tstg Operating Junction and Storage Temperatures -55 to +150 -55 to +150 -55 to +150 ℃ TL Maximum Lead Temperature for Soldering Purposes, 1/8” From Case for 5s 275 275 275 ℃ Maximum On-State Characteristics IRF510/511 IRF512/513 MTP4N08/10 RDS(on) Static Drain-to-Source On Resistance 0.60 0.80 0.80 Ω ID Drain Current Continuous at Tc=25℃ Continuous at Tc=100℃ Pulsed 4.0 2.5 16 3.5 2.0 14 5.0 3.5 14 A Maximum Thermal Characteristics R ӨJC Thermal Resistance Junction to Case 6.4 6.4 2.5 ℃ /W R ӨJA Thermal Resistance Junction to Ambient 80 80 80 ℃ /W PD Total Power Dissipation at Tc=25℃ 20 20 50 W Notes For information concerning connection dregram and package outline, refer to Section 7. |
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