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GD25B64CSIG 데이터시트(PDF) 18 Page - GigaDevice Semiconductor (Beijing) Inc.

부품명 GD25B64CSIG
상세설명  3.3V Uniform Sector Dual and Quad Serial Flash
PDF  57 Pages
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제조업체  GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]
홈페이지  http://www.gigadevice.com/
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3.3V Uniform Sector
Dual and Quad Serial Flash
GD25B64C
18
7.5.
Write Status Register (WRSR) (01H or 31H or 11H)
The Write Status Register (WRSR) command allows new values to be written to the Status Register. Before it can be
accepted, a Write Enable (WREN) command must previously have been executed. After the Write Enable (WREN)
command has been decoded and executed, the device sets the Write Enable Latch (WEL).
The Write Status Register (WRSR) command has no effect on S23, S20, S19, S18, S17, S16, S15, S10, S1 and S0
of the Status Register. CS# must be driven high after the eighth of the data byte has been latched in. If not, the Write Status
Register (WRSR) command is not executed. As soon as CS# is driven high, the self-timed Write Status Register cycle
(whose duration is tW) is initiated. While the Write Status Register cycle is in progress, the Status Register may still be read
to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Write Status
Register cycle, and is 0 when it is completed. When the cycle is completed, the Write Enable Latch (WEL) is reset.
The Write Status Register (WRSR) command allows the user to change the values of the Block Protect (BP4, BP3,
BP2, BP1, and BP0) bits, to define the size of the area that is to be treated as read-only
Figure 5. Write Status Register Sequence Diagram
7.6. Read Data Bytes (READ) (03H)
The Read Data Bytes (READ) command is followed by a 3-byte address (A23-A0), and each bit is latched-in on the
rising edge of SCLK. Then the memory content at that address is shifted out on SO, each bit being shifted out, at a Max
frequency fR, during the falling edge of SCLK. The first byte addressed can be at any location. The address is automatically
incremented to the next higher address after each byte of data is shifted out. The whole memory can, therefore, be read
with a single Read Data Bytes (READ) command. Any Read Data Bytes (READ) command, while an Erase, Program or
Write cycle is in progress, is rejected without having any effects on the cycle that is in progress.
Figure 6. Read Data Bytes Sequence Diagram
Command
0
1
2
3
4
5
6
7
01H/31H/11H
CS#
SCLK
SI
SO
High-Z
8
9 10 11 12 13 14 15
MSB
7
6
5
4
3
2
1
0
Status Register in
Command
0
1
2
3
4
5
6
7
03H
CS#
SCLK
SI
SO
High-Z
8
9 10
28 29 30 31 32
MSB
3
2
1
0
34 35 36 37
33
23 22 21
7
6
5
4
3
2
1
0
38 39
24-bit address
MSB
Data Out1
Data Out2



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