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GD25LB64CSIS 데이터시트(PDF) 62 Page - GigaDevice Semiconductor (Beijing) Inc.

부품명 GD25LB64CSIS
상세설명  1.8V Uniform Sector Dual and Quad Serial Flash
PDF  70 Pages
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제조업체  GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]
홈페이지  http://www.gigadevice.com/
Logo GIGADEVICE - GigaDevice Semiconductor (Beijing) Inc.

GD25LB64CSIS 데이터시트(HTML) 62 Page - GigaDevice Semiconductor (Beijing) Inc.

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1.8V Uniform Sector
Dual and Quad Serial Flash
GD25LB64C
62
8.6 AC CHARACTERISTICS
(T= -40℃~85℃, VCC=1.65~2.0V, CL=30pf)
Symbol
Parameter
Min.
Typ.
Max.
Unit.
fC1
Serial Clock Frequency For: all command except for 03H,
BBH, EBH, E7H
120
MHz
fC2
Serial Clock Frequency For: BBH, EBH, E7H
104
MHz
fR
Serial Clock Frequency For: 03H
80
MHz
tCLH
Serial Clock High Time
3.5
ns
tCLL
Serial Clock Low Time
3.5
ns
tCLCH
Serial Clock Rise Time (Slew Rate)
0.1
V/ns
tCHCL
Serial Clock Fall Time (Slew Rate)
0.1
V/ns
tSLCH
CS# Active Setup Time
5
ns
tCHSH
CS# Active Hold Time
5
ns
tSHCH
CS# Not Active Setup Time
5
ns
tCHSL
CS# Not Active Hold Time
5
ns
tSHSL
CS# High Time (read/write)
20
ns
tSHQZ
Output Disable Time
6
ns
tCLQX
Output Hold Time
1.2
ns
tDVCH
Data In Setup Time
2
ns
tCHDX
Data In Hold Time
2
ns
tCLQV
Clock Low To Output Valid
7
ns
tDP
CS# High To Deep Power-Down Mode
20
μs
tRES1
CS# High To Standby Mode Without Electronic Signature
Read
20
μs
tRES2
CS# High To Standby Mode With Electronic Signature
Read
20
μs
tSUS
CS# High To Next Command After Suspend
20
us
tRS
Latency Between Resume And Next Suspend
100
μs
tRST
CS# High To Next Command After Reset (except from
erase)
30
μs
tRST_E
CS# High To Next Command After Reset (from erase)
12
ms
tW
Write Status Register Cycle Time
5
45
ms
tPP
Page Programming Time
0.7
2.4
ms
tSE
Sector Erase Time
90
500
ms
tBE1
Block Erase Time (32K Bytes)
0.3
0.8
s
tBE2
Block Erase Time (64K Bytes)
0.45
1.2
s
tCE
Chip Erase Time (GD25LB64C)
30
60
s
Note:
1. Typical value tested at T = 25℃.
2. Value guaranteed by design and/or characterization, not 100% tested in production.



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