| 전자부품 데이터시트 검색엔진 |
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GD25Q64CSJS 데이터시트(PDF) 56 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25Q64CSJS 데이터시트(HTML) 56 Page - GigaDevice Semiconductor (Beijing) Inc. |
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56 / 74 page ![]() 3.3V Uniform Sector Dual and Quad Serial Flash GD25Q64C 56 tRES2 CS# High To Standby Mode With Electronic Signature Read 20 μs tSUS CS# High To Next Command After Suspend 20 μs tRS Latency Between Resume And Next Suspend 100 μs tRST CS# High To Next Command After Reset (Except From Erase) 30 μs tRST_E CS# High To Next Command After Reset (From Erase) 12 ms tW Write Status Register Cycle Time 5 30 ms tBP1 Byte Program Time (First Byte) 30 50 μs tBP2 Additional Byte Program Time (After First Byte) 2.5 12 μs tPP Page Programming Time 0.6 2.4 ms tSE Sector Erase Time (4K Bytes) 50 200/300(1) ms tBE1 Block Erase Time (32K Bytes) 0.15 0.8/1.6(2) s tBE2 Block Erase Time (64K Bytes) 0.20 1.2/2.0(3) s tCE Chip Erase Time (GD25Q64C) 25 60 s Note: 1. Max Value 4KB tSE with ≤50K cycles is 200ms and >50K & ≤100k cycles is 300ms. 2. Max Value 32KB tBE with ≤50K cycles is 0.8s and >50K & ≤100k cycles is 1.6s. 3. Max Value 64KB tBE with ≤50K cycles is 1.2s and >50K & ≤100k cycles is 2.0s. 4. Typical value tested at T = 25℃. 5. Value guaranteed by design and/or characterization, not 100% tested in production. |
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