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DSA1103 데이터시트(PDF) 2 Page - Microchip Technology |
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DSA1103 데이터시트(HTML) 2 Page - Microchip Technology |
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2 / 28 page ![]() DSA1103/23 DS20005891A-page 2 2019 Microchip Technology Inc. 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings † Input Voltage, VIN .............................................................................................................................. –0.3V to VDD +0.3V Supply Voltage ......................................................................................................................................... –0.3V to + 4.0V ESD Protection (HBM) ...............................................................................................................................................4 kV ESD Protection (MM) ............................................................................................................................................... 400V ESD Protection (CDM) ............................................................................................................................................1.5 kV † Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS Electrical Characteristics: VDD = 3.3V; TA = +25°C unless otherwise specified. Parameter Symbol Min. Typ. Max. Units Conditions Supply Voltage (Note 1) VDD 2.25 — 3.6 V — Supply Current IDD — — 0.095 mA DSA1103, EN pin low. Output is disabled and device is in standby — 20 22 DSA1123, EN pin low, output is disabled Frequency Stability Δf — — ±10 ppm Grade 2 and Grade 3 only — — ±20 Includes frequency variations due to initial tolerance, temp. and power supply voltage. — — ±25 — — ±50 Aging - First year ΔfY1 — — ±5 ppm One year @ 25°C Aging - After first year ΔfY2 — — <±1 ppm/yr Year two and beyond at +25°C Startup Time (Note 2) tSU — — 5 ms T = +25°C Input Logic Levels VIH 0.75 x VDD — — V Input logic high VIL — — 0.25 x VDD V Input logic low Output Disable Time (Note 3) tDS — — 5 ns — Output Enable Time tEN — — 5 ms DSA1103 20 ns DSA1123 Enable Pull-Up Resistor (Note 4) — — 40 — kΩ Internally pulled-up LVDS Output Supply Current IDD — 29 32 mA Output enabled, RL = 100Ω Output Offset Voltage VOS 1.125 — 1.4 V R = 100Ω differential Delta Offset Voltage ΔVOS — — 50 mV — Peak-to-Peak Output Swing VPP — 350 — mV Single-ended Output Logic Level High VOH 0.9 x VDD — — V I = ±6 mA Output Logic Level Low VOL — — 0.1 x VDD V Output Transition Rise Time (Note 3) tR — 200 — ps 20% to 80%, RL = 50Ω, CL = 2 pF Output Transition Fall Time (Note 3) tF — — Frequency fO 2.3 — 460 MHz –40°C to +85°C 3.3 — 460 –40°C to +105°C and –40°C to +125°C |
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