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PCF7936AS 데이터시트(PDF) 27 Page - NXP Semiconductors |
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PCF7936AS 데이터시트(HTML) 27 Page - NXP Semiconductors |
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27 / 32 page ![]() NXP Semiconductors Product Specification Security Transponder (HITAG2) PCF7936AS 2010 May 04 27 CONFIDENTIAL 10 DEVICE CHARACTERISTICS 10.1 Electrical Characteristics Tamb = -40 to +85°C, fSYS = 125kHz, TO = 1/fSYS. Unless otherwise specified SYMBOL PARAMETER CONDITION MIN TYP MAX UNIT Operating Conditions fRES Resonance frequency 121 129 kHz BW Bandwidth 2.3 kHz BTHR Magnetic flux density, Read direction 35 400 μT PP BPRG Magnetic flux density, Note 1 For EEPROM programming m = 0,95, TWRP = 8 TO 35 400 μT PP BAUT Magnetic flux density, Note 1 For device authentication m = 0,95, TWRP = 8 TO 35 400 μT PP BREAD LF field absorption in read direction, Note 1 BFIELD = 35 μTPP 8 μT PP MIPRG Minimum modulation index (m), Note 1 Write direction, device programming and authentication BFIELD = 35 μTPP, TWRP = 8 TO 95 % EEPROM TRET Data retention time Tamb = 50°C 20 years NWR-CYL Write endurance, page 1 to 7 100 k cycle Note 1. Modulation index (m) and LF Field absorption (BREAD) are defined according to Figure 25. 2. Parameters are measured with the Scemtech test equipment STM-1 in a Helmholtz arrangement according to section 11. Transponder LF Field BMIN BMAX - BMIN m = BMAX + BMIN BMAX BREAD = BMAX - BMIN Figure 25. Definition of modulation index (m) and LF field absorption (BREAD) |
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