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STM32L433CB 데이터시트(PDF) 142 Page - STMicroelectronics |
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STM32L433CB 데이터시트(HTML) 142 Page - STMicroelectronics |
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142 / 225 page ![]() Electrical characteristics STM32L433xx 142/225 DS11449 Rev 5 6.3.10 Flash memory characteristics Table 63. Flash memory characteristics(1) 1. Guaranteed by design. Symbol Parameter Conditions Typ Max Unit tprog 64-bit programming time - 81.69 90.76 µs tprog_row one row (32 double word) programming time normal programming 2.61 2.90 ms fast programming 1.91 2.12 tprog_page one page (2 Kbyte) programming time normal programming 20.91 23.24 fast programming 15.29 16.98 tERASE Page (2 KB) erase time - 22.02 24.47 tprog_bank one bank (512 Kbyte) programming time normal programming 5.35 5.95 s fast programming 3.91 4.35 tME Mass erase time (one or two banks) - 22.13 24.59 ms IDD Average consumption from VDD Write mode 3.4 - mA Erase mode 3.4 - Maximum current (peak) Write mode 7 (for 2 μs) - Erase mode 7 (for 41 μs) - Table 64. Flash memory endurance and data retention Symbol Parameter Conditions Min(1) 1. Guaranteed by characterization results. Unit NEND Endurance TA = –40 to +105 °C 10 kcycles tRET Data retention 1 kcycle(2) at TA = 85 °C 2. Cycling performed over the whole temperature range. 30 Years 1 kcycle(2) at TA = 105 °C 15 1 kcycle(2) at TA = 125 °C 7 10 kcycles(2) at TA = 55 °C 30 10 kcycles(2) at TA = 85 °C 15 10 kcycles(2) at TA = 105 °C 10 |
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