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STM32L433CB 데이터시트(PDF) 147 Page - STMicroelectronics

부품명 STM32L433CB
상세설명  Ultra-low-power Arm® Cortex®-M4 32-bit MCUFPU, 100DMIPS, up to 256KB Flash, 64KB SRAM, USB FS, LCD, ext. SMPS
PDF  225 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STM32L433CB 데이터시트(HTML) 147 Page - STMicroelectronics

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STM32L433xx
Electrical characteristics
193
All I/Os are CMOS- and TTL-compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters. The
coverage of these requirements is shown in Figure 28 for standard I/Os, and in Figure 28 for
5 V tolerant I/Os.
Figure 28. I/O input characteristics
Output driving current
The GPIOs (general purpose input/outputs) can sink or source up to ±8 mA, and sink or
source up to ± 20 mA (with a relaxed VOL/VOH).
1. Refer to Figure 28: I/O input characteristics.
2. Tested in production.
3. Guaranteed by design.
4. This value represents the pad leakage of the IO itself. The total product pad leakage is provided by this formula:
ITotal_Ileak_max = 10 µA + [number of IOs where VIN is applied on the pad] ₓ Ilkg(Max).
5. All FT_xx GPIOs except FT_u and PC3 I/Os.
6. Max(VDDXXX) is the maximum value of all the I/O supplies.
7. To sustain a voltage higher than Min(VDD, VDDA, VDDUSB, VLCD) +0.3 V, the internal Pull-up and Pull-Down resistors must
be disabled.
8. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
PMOS/NMOS contribution to the series resistance is minimal (~10% order).
MSv37613V1
Teste
d in
production
CMOS
requirement
Vih
min
= 0
.7xV
DDIO
x
Based
on simulati
on Vi
h min
= 0.
61xV
DDIOx
+0.05
for 1.08<V
DDIOx
<1.62
or 0.49xV
DDIOx
+0.2
6 for
VDDI
Ox>1
.62
Based
on simu
lation
Vil m
ax =0.43xV
DDIOx
-0.1 for
1.08
<VDDIOx
<1.62
or 0.39xV
DDIOx
-0.06
for VDDIO
x>1.62
Tested
in produ
ction CMOS
requirement
Vil ma
x = 0.3xVdd
TTL requirement Vih min = 2V
TTL requirement Vil max = 0.8V



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