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MGSF2P02HD 데이터시트(PDF) 2 Page - ON Semiconductor

부품명 MGSF2P02HD
상세설명  Power MOSFET 2 Amps, 20 Volts
PDF  8 Pages
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제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
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MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
20
V
Drain−to−Gate Voltage (RGS = 1.0 MΩ)
VDGR
20
V
Gate−to−Source Voltage
VGS
±9
V
Drain Current − Continuous
Drain Current − Single Pulse (tp ≤ 10 ms)
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance − Junction to Ambient (Note 1.)
ID
IDM
PD
PD
RqJA
1.3
10
400
210
312
A
mW
mW
°C/W
Drain Current − Continuous
Drain Current − Single Pulse (tp ≤ 10 ms)
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance − Junction to Ambient (Note 2.)
ID
IDM
PD
PD
RqJA
2.9
15
2.0
1.0
62.5
A
W
W
°C/W
Operating and Storage Temperature Range
TJ, Tstg
− 55 to 150
°C
Single Pulse Drain Source Avalanche Energy VDD = 20 V, VGS = 4.5 Vpk,
IL = 3.6 Apk, L = 25 mH, RG = 25 W
EAS
160
mJ
THERMAL CHARACTERISTICS
Maximum Lead Temperature for Soldering Purposes, 1/8
″ from Case for 5 seconds
TL
260
°C
1. Minimum FR−4 or G−10 PCB, Operating to Steady State.
2. Mounted onto a 2
″ square FR−4 Board (1″ sq. 2 oz. Cu 0.06″ thick single sided), Operating time ≤5 seconds.



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