MGSF2P02HD datasheet(4/8 Pages) ONSEMI

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MGSF2P02HD

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TYPICAL ELECTRICAL CHARACTERISTICS

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

2.0

4.0

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

2.0

4.0

0.4

Figure 3. On−Resistance versus Drain Current

ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

0.1

100

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance versus Temperature

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 6. Drain−To−Source Leakage Current

versus Voltage

VDS ≥ 10 V

100

°C

TJ = − 55°C

0.3

6.0

8.0

−50

100

150

3.0

1.0

2.0

4.0

3.0

1.0

2.0

4.0

0.2

0.6

0.1

1.0

2.0

3.0

4.0

8.0

VGS = 4.5 V

ID = 0.8 A

1.5

0.3

0.2

3.0

ID = 1.3 A

TJ = 25°C

4.5 V

VGS = 2.7 V

−25

125

0.5

2.0

VGS = 0 V

100

°C

1.0

TJ = 25°C

1.7 V

VGS = 8.0 V

0.4

0.8

1.2

1.6

2.0

1.0

°C

0.1

0.5

0.4

1.9 V

2.1 V

2.3 V

2.5 V

2.7 V

2.9 V

3.1 V

4.5 V

3.7 V

3.3 V

TJ = 125°C

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