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AM29BDS643D 데이터시트(PDF) 30 Page - Advanced Micro Devices

부품명 AM29BDS643D
상세설명  64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
PDF  46 Pages
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제조업체  AMD [Advanced Micro Devices]
홈페이지  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29BDS643D 데이터시트(HTML) 30 Page - Advanced Micro Devices

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Am29BDS643D
PRELI M INARY
AC CHARACTERISTICS
Synchronous/Burst Read
Notes:
1. Figure shows total number of wait states set to six cycles. The total number of wait states can be programmed from four cycles
to seven cycles (non-handshaking devices only).
2. Figure shows that PS (power saving mode) has been enabled; one additional wait state occurs during initial data Da. Latency
is not present if PS is not enabled.
3. If any burst address occurs at a 64-word boundary, one additional clock cycle is inserted, and is indicated by RDY.
Figure 9.
Burst Mode Read (54 MHz)
Parameter
Description
9A
(40 MHz)
9B
(54 MHz)
Unit
JEDEC
Standard
tIACC
Initial Access Time
Max
120
106
ns
tBACC
Burst Access Time Valid Clock to Output Delay
Max
20
13.5
ns
tAVDS
AVD# Setup Time to CLK
Min
5
ns
tAVDH
AVD# Hold Time from CLK
Min
7
ns
tAVDO
AVD# High to OE# Low
Min
0
ns
tACS
Address Setup Time to CLK
Min
5
ns
tACH
Address Hold Time from CLK
Min
7
ns
tBDH
Data Hold Time from Next Clock Cycle
Max
4
ns
tOE
Output Enable to Output Valid
Max
20
ns
tCEZ
Chip Enable to High Z
Max
10
ns
tOEZ
Output Enable to High Z
Max
10
ns
tCES
CE# Setup Time to CLK
Min
5
ns
tCEH
CE# Hold Time from CLK
Min
7
ns
tRDYS
RDY Setup Time to CLK
Min
5
ns
tRACC
Ready access time from CLK
Max
20
13.5
ns
Da
Da + 1
Da + 2
Da + n
OE#
A/DQ0:
A/DQ15
A16:
A20
Aa
AVD#
RDY
CLK
CE#
tCES
tACS
tAVDS
tAVDH
tACH
tBACC
tOE
tOEZ
tCEZ
tIACC
tBDH
Aa
5 cycles for initial access shown.
Programmable wait state function is set to 01h.
1 cycle
wait state
when PS
enabled
25 ns typ.
tRACC
Hi-Z
Hi-Z
Hi-Z



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