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DS20005703A-page 1

DN3135

Features

• High Input Impedance

• Low Input Capacitance

• Fast Switching Speeds

• Low On-resistance

• Free from Secondary Breakdown

• Low Input and Output Leakage

Applications

• Normally-on Switches

• Solid State Relays

•Converters

• Linear Amplifiers

• Constant-current Sources

• Power Supply Circuits

• Telecommunications

General Description

The DN3135 is a low-threshold, Depletion-mode

(normally-on) transistor that utilizes an advanced

vertical DMOS structure and a well-proven silicon gate

manufacturing process. This combination produces a

device with the power handling capabilities of bipolar

transistors and the high input impedance and positive

temperature coefficient inherent in MOS devices.

Characteristic of all MOS structures, this device is free

from

thermal

runaway

and

thermally

induced

secondary breakdown.

Microchip’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications

where very low threshold voltage, high breakdown

voltage, high input impedance, low input capacitance

and fast switching speeds are desired.

Package Type

SOT-23 (TO-236AB)

(Top view)

See Table 2-1 for pin information.

DRAIN

SOURCE

GATE

GATE

SOURCE

DRAIN

DRAIN

SOT-89 (TO-243AA)

(Top view)

s

N-Channel Depletion-Mode Vertical DMOS FET