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BS170 데이터시트(PDF) 1 Page - ON Semiconductor |
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BS170 데이터시트(HTML) 1 Page - ON Semiconductor |
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1 / 4 page ![]() © Semiconductor Components Industries, LLC, 2004 April, 2004 − Rev. 4 1 Publication Order Number: BS170/D BS170 Preferred Device Small Signal MOSFET 500 mA, 60 V N−Channel TO−92 (TO−226) Features • Pb−Free Package is Available* MAXIMUM RATINGS Rating Symbol Value Unit Drain − Source Voltage VDS 60 Vdc Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 ms) VGS VGSM ±20 ±40 Vdc Vpk Drain Current (Note) ID 0.5 Adc Total Device Dissipation @ TA = 25°C PD 350 mW Operating and Storage Junction Temperature Range TJ, Tstg − 55 to +150 °C 1. The Power Dissipation of the package may result in a lower continuous drain current. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. BS170 Y = Year WW = Work Week YWW MARKING DIAGRAM & PIN ASSIGNMENT D G TO−92 (TO−226) CASE 29 STYLE 30 N−Channel S 1 2 3 1 Drain 3 Source 2 Gate 500 mA, 60 V RDS(on) = 5 W Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com |
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