| 전자부품 데이터시트 검색엔진 |
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BS170 데이터시트(PDF) 3 Page - ON Semiconductor |
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BS170 데이터시트(HTML) 3 Page - ON Semiconductor |
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3 / 4 page ![]() BS170 http://onsemi.com 3 Figure 1. Switching Test Circuit 20 dB 50 W ATTENUATOR PULSE GENERATOR +25 V Vin 40 pF 1.0 MW 50 W 125 W 50 W Vout TO SAMPLING SCOPE 50 W INPUT OUTPUT INVERTED INPUT PULSE WIDTH 10% 50% 10% 90% 90% toff ton Figure 2. Switching Waveforms RESISTIVE SWITCHING (Vin Amplitude 10 Volts) Vin Vout 2.0 1.6 1.2 0.8 0.4 0 50 150 050 100 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.8 0.4 1.2 2.0 1.6 1.0 2.0 3.0 4.0 0 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.8 0.4 1.2 1.6 2.0 010 20 30 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0 10 2030 4050 60 40 20 80 100 40 60 Figure 3. VGS(th) Normalized versus Temperature Figure 4. On−Region Characteristics Figure 5. Output Characteristics Figure 6. Capacitance versus Drain−To−Source Voltage VGS = 10 V VGS = 0 V Ciss Coss Crss 9.0 V 8.0 V 7.0 V 6.0 V 5.0 V 4.0 V VDS = VGS ID = 1.0 mA VGS = 10 V 9.0 V 8.0 V 7.0 V 6.0 V 5.0 V 4.0 V |
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