RM0016 datasheet(40/467 Pages) STMICROELECTRONICS

40 / 467 page

Flash program memory and data EEPROM

RM0016

40/467

DocID14587 Rev 14

Figure 8. Flash memory and data EEPROM organization high density STM8S and

STM8AF

4.4.2

Memory access/ wait state configuration

The Flash/ data EEPROM access time allows the device to run at up to 16 MHz without wait

states.

When using the high-speed external clock (HSE) at higher frequencies up to 24 MHz, one

wait state is necessary. In this case the device option byte should be programmed to insert

this wait state. Refer to the datasheet option byte section.

4.4.3

User boot area (UBC)

The user boot area (UBC) contains the reset and the interrupt vectors. It can be used to

store the IAP and communication routines. The UBC area has a second level of protection

to prevent unintentional erasing or modification during IAP programming. This means that it

is always write protected and the write protection cannot be unlocked using the MASS keys.

ai15501b

USER BOOT CODE (UBC)

(permanently write protected)

0x00 8000

MAIN PROGRAM

(write access possible for IAP

and using MASS mechanism)

0x02 7FFF

Programmable size

from 2 pages (1 Kbytes)

up to 64 or 128 Kbytes

(1 page steps)

DATA MEMORY

(up to 2 Kbytes)

32 to 128 Kbytes of

Flash Program

Memory

Flash program

memory

Interrupt vectors (128 bytes)

OPTION BYTES (1 block)

0x00 487F

0x00 4000

DATA EEPROM

1 page = 512 bytes

1 block = 128 bytes

0x00 47FF

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