FSES0765RG

5

(Ta=25

°C unless otherwise specified)

Note:

1. These parameters, although guaranteed in design, are tested only in EDS (wafer test) process.

2. These parameters, although guaranteed in design, are not tested in mass production.

Parameter

Symbol

Condition

Min.

Typ. Max. Unit

SENSEFET SECTION

Drain-Source Breakdown Voltage

650

-

-

V

Zero Gate Voltage Drain Current

= 0V

-

-

250

μA

-

-

300

μA

Static Drain-source on Resistance

-

1.4

1.6

Ω

Output Capacitance

Coss

f = 1MHz

-

100

130

pF

UVLO SECTION

Vcc Start Threshold Voltage

11

12

13

V

Vcc Stop Threshold Voltage (Normal operation)

8.5

9

9.5

V

Vcc Stop Threshold Voltage (Burst operation)

7

7.5

8

V

OSCILLATOR SECTION

Initial Frequency

18

20

22

kHz

Voltage Stability

11V

≤ Vcc ≤ 18V

0

1

3

%

Maximum Duty Cycle

48

55

62

%

Minimum Duty Cycle

--

0

-

%

FEEDBACK SECTION

Feedback Source Current (Normal operation)

0.7

0.9

1.1

mA

Feedback Source Current (Burst operation)

70

100

130

uA

Feedback Voltage Threshold to Stop Switching

0V

0.2

0.3

0.4

V

Shutdown Feedback Voltage

7

7.5

8

V

Shutdown Delay Current

1.6

2

2.4

μA

PROTECTION SECTION

Over Voltage Protection

Vcc

≥ 17V18

19

20

V

-

0.9

1.0

1.1

V

-

140

-

-

°C