2N7002KB datasheet(1/8 Pages) VBSEMI

부품명	2N7002KB

상세설명	N-Channel 60-V (D-S) MOSFET

PDF	8 Pages

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제조업체	VBSEMI [VBsemi Electronics Co.,Ltd]

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N-Channel 60-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

Low Threshold: 2 V (typ.)

•

Low Input Capacitance: 25 pF

•

Fast Switching Speed: 25 ns

•

Low Input and Output Leakage

•

TrenchFET® Power MOSFET

•

1200V ESD Protection

• Compliant to RoHS Directive 2002/95/EC

BENEFITS

•

Low Offset Voltage

•

Low-Voltage Operation

•

Easily Driven Without Buffer

•

High-Speed Circuits

•

Low Error Voltage

APPLICATIONS

•

Direct Logic-Level Interface: TTL/CMOS

•

Drivers: Relays, Solenoids, Lamps, Hammers, Display,

Memories, Transistors, etc.

•

Battery Operated Systems

•

Solid-State Relays

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (mA)

60

2.8 at VGS = 10 V

250

SOT-23

1

2

3

Top View

G

S

D

Notes:

a. Pulse width limited by maximum junction temperature.

b. Surface Mounted on FR4 board.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

60

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

b

TA = 25 °C

ID

250

mA

TA = 100 °C

150

Pulsed Drain Currenta

IDM

800

Power Dissipationb

TA = 25 °C

PD

0.30

W

TA = 100 °C

0.13

Maximum Junction-to-Ambientb

RthJA

350

°C/W

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

N-Channel MOSFET

G

D

S

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