| 전자부품 데이터시트 검색엔진 |
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2N7002KB 데이터시트(PDF) 2 Page - VBsemi Electronics Co.,Ltd |
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2N7002KB 데이터시트(HTML) 2 Page - VBsemi Electronics Co.,Ltd |
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2 / 8 page ![]() Notes: a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TA = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Limits Unit Min. Typ.a Max. Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 10 µA 60 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 12.5 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 10 µA VDS = 0 V, VGS = ± 15 V 1 VDS = 0 V, VGS = ± 10 V ± 150 nA VDS = 0 V, VGS = ± 10 V, TJ = 85 °C ± 1000 VDS = 0 V, VGS = ± 5 V ± 100 Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 1 µA VDS = 60 V, VGS = 0 V , TJ = 125 °C 500 On-State Drain Currenta ID(on) VGS = 10 V, VDS = 7.5 V 500 mA VGS = 4.5 V, VDS = 10 V 300 Drain-Source On-Resistancea RDS(on) VGS = 10 V, ID = 200 mA Ω VGS = 4.5 V, ID = 150 mA Forward Transconductancea gfs VDS = 10 V, ID = 100 mA 100 mS Diode Forward Voltage VSD IS = 100 mA, VGS = 0 V 1.3 V Dynamica Total Gate Charge Qg VDS = 10 V, VGS = 4.5 V ID ≅ 150 mA 0.4 0.6 nC Input Capacitance Ciss VDS = 25 V, VGS = 0 V f = 1 MHz 25 pF Output Capacitance Coss 5 Reverse Transfer Capacitance Crss 2.0 Switchinga, b, c Turn-On Time td(on) VDD = 30 V, RL = 150 Ω ID ≅ 200 mA, VGEN = 10 V, RG = 10 Ω 20 ns Turn-Off Time td(off) 30 2.8 3.1 3.3 3.8 www.VBsemi.tw E-mail:China@VBsemi TEL:86-755-83251052 2N7002KB 2 |
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