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REF4132 데이터시트(PDF) 4 Page - Texas Instruments |
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REF4132 데이터시트(HTML) 4 Page - Texas Instruments |
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4 / 25 page ![]() 4 REF4132 SNAS794 – MAY 2020 www.ti.com Product Folder Links: REF4132 Submit Documentation Feedback Copyright © 2020, Texas Instruments Incorporated (1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. These are stress ratings only and functional operation of the device at these or any other conditions beyond those specified in the Electrical Characteristics Table is not implied. 7 Specifications 7.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT Input voltage VIN –0.3 6 V Enable voltage VEN –0.3 VIN + 0.3 V Output voltage VREF –0.3 5.5 V Output short circuit current ISC 20 mA Operating temperature range TA –55 150 °C Storage temperature range Tstg –65 170 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) ±2500 V Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) ±1500 (1) Dropout voltage 7.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT VIN Input Voltage VREF + VDO (1) 5.5 V VEN Enable Voltage 0 VIN V IL Output Current –10 10 mA TA Operating Temperature –40 25 125 ℃ (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 7.4 Thermal Information THERMAL METRIC(1) DEVICE UNIT DBV 5 PINS RθJA Junction-to-ambient thermal resistance 185 °C/W RθJC(top) Junction-to-case (top) thermal resistance 156 °C/W RθJB Junction-to-board thermal resistance 29.6 °C/W ΨJT Junction-to-top characterization parameter 33.8 °C/W ΨJB Junction-to-board characterization parameter 29.1 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W |
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