| 전자부품 데이터시트 검색엔진 |
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PJM2306NSA 데이터시트(PDF) 3 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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PJM2306NSA 데이터시트(HTML) 3 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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3 / 6 page ![]() 0.0 0.4 0.8 1.2 1.6 2.0 0.1 1 10 01 23 4 0 4 8 12 16 20 01 23 456 78 9 10 0 10 20 30 40 50 60 70 80 01 23 456 78 9 10 0 100 200 300 400 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8 0 2 4 6 8 10 12 14 25 50 75 100 125 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 T a=100 ℃ Pulsed V SD I S —— T a=25 ℃ Pulsed SOURCE TO DRAIN VOLTAGE V SD (V) V GS=7V V GS=6V V GS=5V V GS=4V Output Characteristics V GS=3V DRAIN TO SOURCE VOLTAGE V DS (V) VGS=4.5V VGS=10V T a=25 ℃ Pulsed DRAIN CURRENT I D (A) I D —— R DS(ON) T a=100 ℃ Pulsed T a=25 ℃ Pulsed GATE TO SOURCE VOLTAGE V GS (V) V GS —— R DS(ON) ID=2.5A VDS=3V GATE TO SOURCE VOLTAGE V GS (V) Transfer Characteristics T a=100 ℃ T a=25 ℃ I D=-250uA Threshold Voltage JUNCTION TEMPERATURE T j ( ) ℃ PJM2306NSA N- Enhancement Mode Field Effect Transistor 3 / 6 www.pingjingsemi.com Revision:1.1 Dec-2018 Typical Characteristics Curves |
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