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AS7C331MFT32A 데이터시트(PDF) 6 Page - Alliance Semiconductor Corporation

부품명 AS7C331MFT32A
상세설명  3.3V 1M x 32/36 Flow-through synchronous SRAM
PDF  19 Pages
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제조업체  ALSC [Alliance Semiconductor Corporation]
홈페이지  https://www.alliancememory.com
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AS7C331MFT32A 데이터시트(HTML) 6 Page - Alliance Semiconductor Corporation

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AS7C331MFT32A
AS7C331MFT36A
12/23/04, v 1.3
Alliance Semiconductor
6 of 19
Write enable truth table (per byte)
Key: X = don’t care, L = low, H = high, n = a, b, c, d;
BWE, BWn = internal write signal.
Asynchronous Truth Table
Notes:
1. X means “Don’t Care”
2. ZZ pin is pulled down internally
3. For write cycles that follows read cycles, the output buffers must be disabled with OE, otherwise data bus contention will occur.
4. Snooze mode means power down state of which stand-by current does not depend on cycle times
5. Deselected means power down state of which stand-by current depends on cycle times
Burst sequence table
Function
GWE
BWE
BWa
BWb
BWc
BWd
Write All Bytes
L
X
XXX
X
H
L
LL
LL
Write Byte a
HL
LH
H
H
Write Byte c and d
HL
H
H
L
L
Read
HH
XXX
X
H
L
HHH
H
Operation
ZZ
OE
I/O Status
Snooze mode
H
X
High-Z
Read
L
L
Dout
L
H
High-Z
Write
L
X
Din, High-Z
Deselected
L
X
High-Z
Interleaved burst address (LBO = 1)
Linear burst address (LBO = 0)
A1 A0
A1 A0
A1 A0
A1 A0
A1 A0
A1 A0
A1 A0
A1 A0
1st Address
0 00 11 0
1 1
1st Address
0 0
0 11 01 1
2nd Address
0 10 01 1
1 0
2nd Address
0 1
1 01 10 0
3rd Address
1 01 10 0
0 1
3rd Address
1 0
1 10 00 1
4th Address
1 11 00 1
0 0
4th Address
1 1
1 00 11 0



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