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AS7C331MFT32A 데이터시트(PDF) 8 Page - Alliance Semiconductor Corporation

부품명 AS7C331MFT32A
상세설명  3.3V 1M x 32/36 Flow-through synchronous SRAM
PDF  19 Pages
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제조업체  ALSC [Alliance Semiconductor Corporation]
홈페이지  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS7C331MFT32A 데이터시트(HTML) 8 Page - Alliance Semiconductor Corporation

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AS7C331MFT32A
AS7C331MFT36A
12/23/04, v 1.3
Alliance Semiconductor
8 of 19
Absolute maximum ratings
Stresses greater than those listed under “Absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only, and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to abso-
lute maximum rating conditions may affect reliability.
Recommended operating conditions at 3.3V I/O
Recommended operating conditions at 2.5V I/O
Parameter
Symbol
Min
Max
Unit
Power supply voltage relative to GND
VDD, VDDQ
–0.5
+4.6
V
Input voltage relative to GND (input pins)
VIN
–0.5
VDD + 0.5
V
Input voltage relative to GND (I/O pins)
VIN
–0.5
VDDQ + 0.5
V
Power dissipation
Pd
–1.8
W
Short circuit output current
IOUT
20
mA
Storage temperature
Tstg
–65
+150
oC
Temperature under bias
Tbias
–65
+135
oC
Parameter
Symbol
Min
Nominal
Max
Unit
Supply voltage for inputs
VDD
3.135
3.3
3.465
V
Supply voltage for I/O
VDDQ
3.135
3.3
3.465
V
Ground supply
Vss
0
0
0
V
Parameter
Symbol
Min
Nominal
Max
Unit
Supply voltage for inputs
VDD
3.135
3.3
3.465
V
Supply voltage for I/O
VDDQ
2.375
2.5
2.625
V
Ground supply
Vss
0
0
0
V



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