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IS25LP032D-RKLE 데이터시트(PDF) 52 Page - Integrated Silicon Solution, Inc

부품명 IS25LP032D-RKLE
상세설명  SERIAL FLASH MEMORY WITH 133MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE
PDF  118 Pages
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제조업체  ISSI [Integrated Silicon Solution, Inc]
홈페이지  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS25LP032D-RKLE 데이터시트(HTML) 52 Page - Integrated Silicon Solution, Inc

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IS25LP032D
IS25WP032D
Integrated Silicon Solution, Inc.- www.issi.com
52
Rev. A12
08/04/2020
8.11 SECTOR ERASE OPERATION (SER, D7h/20h)
A Sector Erase (SER) instruction erases a 4 Kbyte sector before the execution of a SER instruction, the Write
Enable Latch (WEL) must be set via a Write Enable (WREN) instruction. The WEL bit is automatically reset after
the completion of Sector Erase operation.
A SER instruction is entered, after CE# is pulled low to select the device and stays low during the entire instruction
sequence The SER instruction code, and three address bytes are input via SI. Erase operation will start immediately
after CE# is pulled high. The internal control logic automatically handles the erase voltage and timing.
The progress or completion of the erase operation can be determined by reading the WIP bit in the Status Register
using a RDSR instruction.
If the WIP bit is “1”, the erase operation is still in progress. If the WIP bit is “0”, the erase operation has been
completed.
Figure 8.14 Sector Erase Sequence in SPI mode
Instruction = D7h/20h
23
CE #
SCK
SI
3
2
SO
1
0
3-byte Address
High Impedance
22
21
...
0
1
2
3
4
5
6
7
8
9
10
...
28
29
30
31
Mode 3
Mode 0
Figure 8.15 Sector Erase Sequence In QPI Mode
D7h/20h
CE#
SCK
IO[3:0]
3-byte Address
0
1
2
3
4
5
6
7
Mode 3
Mode 0
23:20 19:16 15:12 11:8
7:4
3:0



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