TP2502 datasheet(2/14 Pages) MICROCHIP

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TP2502

DS20005962A-page 2

 2019 Microchip Technology Inc.

1.0

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings†

Drain-to-Source Voltage ...................................................................................................................................... BVDSS

Drain-to-Gate Voltage ......................................................................................................................................... BVDGS

Gate-to-Source Voltage ......................................................................................................................................... ±20V

Operating Junction Temperature, TJ ................................................................................................... –55°C to +150°C

Storage Temperature, TS ..................................................................................................................... –55°C to +150°C

† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only, and functional operation of the device at those or any other conditions above those

indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for

extended periods may affect device reliability.

DC ELECTRICAL CHARACTERISTICS

Electrical Specifications: TA = 25°C unless otherwise specified. All DC parameters are 100% tested at 25°C unless

otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle

Parameter

Sym.

Min.

Typ. Max.

Unit

Conditions

Drain-to-Source Breakdown Voltage

BVDSS

–20

—

VGS = 0V, ID = –2 mA

Gate Threshold Voltage

VGS(th)

–1

—

–2.4

VGS = VDS, ID = –1 mA

Change in VGS(th) with Temperature

∆VGS(th)

—

4.5

mV/°C

VGS = VDS, ID = –1 mA

(Note 1)

Gate Body Leakage Current

IGSS

—

–100

VGS = ± 20V, VDS = 0V

Zero-Gate Voltage Drain Current

IDSS

—

–100

μA

VGS = 0V,

VDS = Maximum rating

—

–10

VDS = 0.8 Maximum rating,

VGS = 0V, TA = 125°C

(Note 1)

On-State Drain Current

ID(ON)

–0.4

–0.7

—

VGS = –5V, VDS = –15V

–2

–3.3

—

VGS = –10V, VDS = –15V

Static Drain-to-Source On-State Resistance

RDS(ON)

—

3.5

Ω

VGS = –5V, ID = –250 mA

—

1.5

Ω

VGS = –10V, ID = –1A

Change in RDS(ON) with Temperature

∆RDS(ON)

—

0.75

1.2

%/°C

VGS = –10V, ID = –1A

(Note 1)

Note 1: Specification is obtained by characterization and is not 100% tested.

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