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P2003BVG 데이터시트(PDF) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD

부품명 P2003BVG
상세설명  N-Channel Enhancement Mode MOSFET
PDF  8 Pages
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제조업체  UNIKC [Wuxi U-NIKC Semiconductor CO.,LTD]
홈페이지  http://www.unikc.com.cn/
Logo UNIKC - Wuxi U-NIKC Semiconductor CO.,LTD

P2003BVG 데이터시트(HTML) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD

  P2003BVG Datasheet HTML 1Page - Wuxi U-NIKC Semiconductor CO.,LTD P2003BVG Datasheet HTML 2Page - Wuxi U-NIKC Semiconductor CO.,LTD P2003BVG Datasheet HTML 3Page - Wuxi U-NIKC Semiconductor CO.,LTD P2003BVG Datasheet HTML 4Page - Wuxi U-NIKC Semiconductor CO.,LTD P2003BVG Datasheet HTML 5Page - Wuxi U-NIKC Semiconductor CO.,LTD P2003BVG Datasheet HTML 6Page - Wuxi U-NIKC Semiconductor CO.,LTD P2003BVG Datasheet HTML 7Page - Wuxi U-NIKC Semiconductor CO.,LTD P2003BVG Datasheet HTML 8Page - Wuxi U-NIKC Semiconductor CO.,LTD  
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P2003BVG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
100% Rg tested
100% UIS tested
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
THERMAL RESISTANCE RATINGS
UNITS
°C / W
1Pulse width limited by maximum junction temperature.
IAS
MAXIMUM
Junction-to-Ambient
50
SYMBOL
±25
IDM
SYMBOL
9
LIMITS
A
VGS
VDS
18.5
ID
°C
W
UNITS
32
7
17
mJ
1.6
30
Drain-Source Voltage
TA= 25 °C
ID
TA = 25 °C
30V
Continuous Drain Current
TA = 70 °C
PARAMETERS/TEST CONDITIONS
RDS(ON)
20mΩ @V
GS = 10V
9A
Gate-Source Voltage
EAS
THERMAL RESISTANCE
Avalanche Energy
TYPICAL
TA =70 °C
Junction & Storage Temperature Range
-55 to 150
Pulsed Drain Current
1
Avalanche Current
PD
RqJA
Power Dissipation
Tj, Tstg
2.5
V
L =0.1mH
REV 1.1
1
2015/11/11


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