전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

Preview PDF HTML

P2003BVG 데이터시트(PDF) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

부품명 P2003BVG
상세설명  N-Channel Enhancement Mode MOSFET
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  UNIKC [Wuxi U-NIKC Semiconductor CO.,LTD]
홈페이지  http://www.unikc.com.cn/
Logo UNIKC - Wuxi U-NIKC Semiconductor CO.,LTD

P2003BVG 데이터시트(HTML) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

  P2003BVG Datasheet HTML 1Page - Wuxi U-NIKC Semiconductor CO.,LTD P2003BVG Datasheet HTML 2Page - Wuxi U-NIKC Semiconductor CO.,LTD P2003BVG Datasheet HTML 3Page - Wuxi U-NIKC Semiconductor CO.,LTD P2003BVG Datasheet HTML 4Page - Wuxi U-NIKC Semiconductor CO.,LTD P2003BVG Datasheet HTML 5Page - Wuxi U-NIKC Semiconductor CO.,LTD P2003BVG Datasheet HTML 6Page - Wuxi U-NIKC Semiconductor CO.,LTD P2003BVG Datasheet HTML 7Page - Wuxi U-NIKC Semiconductor CO.,LTD P2003BVG Datasheet HTML 8Page - Wuxi U-NIKC Semiconductor CO.,LTD  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
P2003BVG
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
MIN
TYP
MAX
30
1
1.7
2.5
±100
nA
1
10
32
A
26
31
18.4
20
16
S
524
132
62
2.2
Ω
9.7
4.5
1.5
2.3
11
17
37
20
2.5
A
1
V
1Pulse test : Pulse Width
 300 msec, Duty Cycle  2％.
2Independent of operating temperature.
DYNAMIC
Gate-Drain Charge
2
Gate-Source Charge
2
Reverse Transfer Capacitance
VDS = 0V, VGS = ±25V
IDSS
Coss
Crss
VDS = 24V, VGS = 0V
VGS = 0V, VDS = 15V, f = 1MHz
Qg(VGS=4.5V)
Rg
pF
nC
Qgs
STATIC
Drain-Source Breakdown Voltage
V
VSD
IF = 8A, VGS = 0V
nS
VDD = 15V,ID @ 1A,
VGEN = 10V, RG = 0.2Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
td(on)
tr
Continuous Current
Forward Voltage
1
IS
td(off)
tf
Turn-On Delay Time
2
Rise Time
2
Turn-Off Delay Time
2
Fall Time
2
V(BR)DSS
TEST CONDITIONS
VGS = 10V, ID = 8A
Drain-Source On-State
Resistance
1
RDS(ON)
LIMITS
Qgd
Output Capacitance
Qg(VGS=10V)
Forward Transconductance
1
Ciss
VDS = 15V, ID = 8A
Input Capacitance
gfs
Total Gate Charge
2
Gate Resistance
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 15V , ID =8A
VDS = 20V, VGS = 0V, TJ = 55 °C
PARAMETER
mΩ
VGS = 4.5V, ID = 6A
SYMBOL
UNITS
Zero Gate Voltage Drain Current
VGS = 0V, ID = 250mA
mA
On-State Drain Current
1
ID(ON)
VDS = 5V, VGS = 10V
Gate-Body Leakage
VGS(th)
IGSS
Gate Threshold Voltage
VDS = VGS, ID = 250mA
REV 1.1
2
2015/11/11



Html Pages

1 2 3 4 5 6 7 8


데이터시트 다운로드

Go To PDF Page


링크 URL



ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크 투 데이터시트    |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com