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ADP5600ACPZ-R7 데이터시트(PDF) 19 Page - Analog Devices

부품명 ADP5600ACPZ-R7
상세설명  Interleaved Inverting Charge Pump with Negative LDO Regulator
PDF  25 Pages
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ADP5600ACPZ-R7 데이터시트(HTML) 19 Page - Analog Devices

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Data Sheet
ADP5600
Rev. 0 | Page 19 of 25
THERMAL CONSIDERATIONS
If the ADP5600 junction temperature rises above 150°C, the
internal thermal shutdown circuit turns off the oscillator, charge
pump, and LDO for self protection. Extreme junction temperatures
can be the result of high current operation, poor circuit board
thermal design, and/or high ambient temperature. TSDHYS is
included in the thermal shutdown circuit so that if an overtemper-
ature event occurs, the ADP5600 does not return to normal
operation until the on-chip temperature drops below 135°C.
Upon recovery, both the charge pump and LDO soft starts are
initiated before normal operation begins.
The junction temperature of the ADP5600 can be calculated by
TJ = TA + (PD × θJA)
where:
TA is the ambient temperature.
θJA is the JEDEC thermal resistance.
PD is the power dissipation in the die, given by
PD = ((VIN – VLDO_OUT) × ILDO_OUT) + (VIN × ISW)
where:
VIN and VLDO_OUT are the input and output voltages, respectively.
ILDO_OUT is the LDO load current.
ISW is the active switching current.
Figure 55 shows junction temperature calculations for different
ambient temperatures and power dissipation.
Figure 55. Junction Temperature vs. Total Power Dissipation at Various
Ambient Temperatures
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
TOTAL POWER DISSIPATION (W)
TA = 25°C
TA = 50°C
TA = 85°C



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