AM29N323D datasheet(47/48 Pages) AMD

47 / 48 page

Am29N323D

August 8, 2002

REVISION SUMMARY

Notice: This document is not intended for

public release, and is differentiated from

the publicly released version by an “N” in

the publication number. For information

on the publicly released device, the

Am29BDS323, refer to publication 23476,

available at http://www.amd.com/prod-

ucts/nvd/techdocs/23476.pdf.

Revision A (February 15, 2000)

Limited, non-public release.

Revision B (June 20, 2000)

Public release, with the following changes:

Block Diagram

Corrected address range to A0–A20.

Ordering Information

Deleted reference to 54 MHz speed option.

Device Bus Operations table

Split address range column into two columns.

AC Characteristics

Asynchronous Read: In table, changed “falling” to

“rising” in description of tAAVDS. In diagram, modified

tAAVDS and tAAVDH waveforms to reference from the

rising edge of AVD#.

Synchronous/Burst Read table: Added tRDYS, tCEH

specifications.

Erase/Program Operations table, Program Operations

Timings figure, Chip/Sector Erase Operations Timings

figure: Added tAVDP. Added PS waveforms to program

operations timings figure.

Initial Access with Power Savings (PS) and

Address Boundary Latency figure

Modified D0 data to extended to D1.

Erase and Programming Performance

Added typical and maximum accelerated chip pro-

gramming time.

Revision B+1 (August 11, 2000)

Chip Erase Command Sequence

Corrected the command sequence length during

unlock bypass mode from four cycles to two.

Revision B+2 (November 27, 2000)

Global

Changed all 9A (speed option) references to 90A.

Accelerated Program Operation, Program

Command Sequence

Added text indicating that sectors must be unlocked

prior to raising VPP to VID.

AC Characteristics

Figure 9, Burst Mode Read: Corrected RDY waveform

to indicate when PS is enabled, and when RDY is in the

high impedance state.

Figure 14, Accelerated Unlock Bypass Programming

Timing: Modified Note 3 to indicate that sectors must

be unlocked prior to raising VPP to VID.

Revision B+3 (November 30, 2000)

Figure 10, Asynchronous Mode Read

Corrected endpoint for tAAVDS specification.

Figure 16, Toggle Bit Timings

(During Embedded Algorithm)

Corrected OE# waveform during second VA (valid

address) period.

Revision B+4 (December 21, 2000)

Figure 9, Burst Mode Read

Corrected RDY waveform.

Revision B+5 (March 7, 2001)

Global

The 90 ns asynchronous access time specification has

changed to 110 ns. Note that the device now has a new

ordering part number and a new package marking.

Input/Output Descriptions, RESET#: Hardware

Reset Input

Noted that RESET# must be asserted low during

device power-up.

Autoselect Command Sequence

Added extended device ID explanatory text.

Sector Erase Command Sequence, DQ7: Data#

Polling, and DQ6: Toggle Bit I

Added explanatory text to indicate 200 µs wait for first

status read occurring in a different bank than the last

sector selected for erasure in a multiple bank sector

erase command sequence.

Table 4, Command Definitions

Added the extended device ID code to table. Added

corresponding note below table.

AM29N323D 데이터시트(PDF) 47 Page - Advanced Micro Devices

AM29N323D 데이터시트(HTML) 47 Page - Advanced Micro Devices

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48

데이터시트 다운로드

링크 URL