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P4025LS 데이터시트(PDF) 4 Page - VBsemi Electronics Co.,Ltd |
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P4025LS 데이터시트(HTML) 4 Page - VBsemi Electronics Co.,Ltd |
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4 / 9 page ![]() TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.1 1 10 100 0 0.5 1.0 1.5 TJ = 25 °C TJ = 150 °C V SD - Source-to-Drain Voltage (V) 1.3 1.6 1.9 2.2 2.5 - 50 - 25 0 25 50 75 100 125 150 ID = 250 μA T J - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power (Junction-to-Ambient) 0 0.01 0.02 0.03 0.04 0.05 246 8 10 ID =10.2A TJ = 25 °C TJ = 125 °C V GS - Gate-to-Source Voltage (V) 0 20 80 Time (s) 40 60 1 1000 10 10-1 10-2 100 Safe Operating Area, Junction-to-Ambient 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 1s 10 s Limited by RDS(on)* BVDSS Limited 1ms 100 μs 10 ms DC 100 ms V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified E-mail:China@VBsemi TEL:86-755-83251052 www.VBsemi.tw P4025LS 4 |
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