P4025LS datasheet(1/9 Pages) VBSEMI

부품명	P4025LS

상세설명	P-Channel 40 V (D-S) MOSFET

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제조업체	VBSEMI [VBsemi Electronics Co.,Ltd]

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P-Channel 40 V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

100 % Rg Tested

•

100 % UIS Tested

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Load Switch

•POL

Notes:

a. Based on TC = 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under steady state conditions is 85 °C/W.

PRODUCT SUMMARY

VDS (V)

RDS(on) ()ID (A)

a

Qg (Typ.)

- 40

0.01

0 at VGS = - 10 V

- 16.1

33 nC

0.0

14 at VGS = - 4.5 V

- 13.3

SO-8

SD

GD

5

6

7

8

Top View

2

3

4

1

S

G

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 40

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

- 16.1

A

TC = 70 °C

- 12.9

TA = 25 °C

- 10.2b, c

TA = 70 °C

- 8.2b, c

Pulsed Drain Current

IDM

- 50

Continous Source-Drain Diode Current

TC = 25 °C

IS

- 5.3

TA = 25 °C

- 2.1b, c

Single Pulse Avalanche Current

L = 0.1 mH

IAS

- 28

Single Pulse Avalanche Energy

EAS

39

mJ

Maximum Power Dissipation

TC = 25 °C

PD

6.3

W

TC = 70 °C

4

TA = 25 °C

2.5b, c

TA = 70 °C

1.6b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, d

t

 10 s

RthJA

37

50

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

16

20

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P4025LS

1

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