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STM32WB35CCU6ATR 데이터시트(PDF) 122 Page - STMicroelectronics

부품명 STM32WB35CCU6ATR
상세설명  Multiprotocol wireless 32-bit MCU Arm®-based Cortex®-M4 with FPU, Bluetooth® 5 and 802.15.4 radio solution
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STM32WB35CCU6ATR 데이터시트(HTML) 122 Page - STMicroelectronics

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Electrical characteristics
STM32WB55xx STM32WB35xx
122/193
DS11929 Rev 10
6.3.11
Internal clock source characteristics
The parameters given in Table 59 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 24: General operating
conditions. The provided curves are characterization results, not tested in production.
High-speed internal (HSI16) RC oscillator
VLSEH
OSC32_IN input pin
high level voltage
-
0.7 VDDx
-VDDx
V
VLSEL
OSC32_IN input pin
low level voltage
-VSS
-
0.3 VDDx
tw(LSEH)
tw(LSEL)
OSC32_IN high or
low time
-250
-
-
ns
ftolLSE
Frequency tolerance
Includes initial
accuracy, stability over
temperature, aging and
frequency pulling
-500
-
+500
ppm
1. Guaranteed by design.
Table 58. Low-speed external user clock characteristics(1) – Bypass mode
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Table 59. HSI16 oscillator characteristics(1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI16
HSI16 Frequency
VDD=3.0 V, TA=30 °C
15.88
-
16.08
MHz
TRIM
HSI16 user trimming step
Trimming code is not a
multiple of 64
0.2
0.3
0.4
%
Trimming code is a
multiple of 64
-4
-6
-8
DuCy(HSI16)(2) Duty Cycle
-
45
-
55
∆Temp(HSI16)
HSI16 oscillator frequency drift over
temperature
TA= 0 to 85 °C
-1
-
1
TA= -40 to 125 °C
-2
-
1.5
∆VDD(HSI16)
HSI16 oscillator frequency drift over
VDD
VDD=1.62 V to 3.6 V
-0.1
-
0.05
tsu(HSI16)(2)
HSI16 oscillator start-up time
-
-
0.8
1.2
μs
tstab(HSI16)(2) HSI16 oscillator stabilization time
-
-
3
5
IDD(HSI16)(2)
HSI16 oscillator power consumption
-
-
155
190
μA
1. Guaranteed by characterization results.
2. Guaranteed by design.



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