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STM32WB35CCU6ATR 데이터시트(PDF) 122 Page - STMicroelectronics |
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STM32WB35CCU6ATR 데이터시트(HTML) 122 Page - STMicroelectronics |
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122 / 193 page ![]() Electrical characteristics STM32WB55xx STM32WB35xx 122/193 DS11929 Rev 10 6.3.11 Internal clock source characteristics The parameters given in Table 59 are derived from tests performed under ambient temperature and supply voltage conditions summarized in Table 24: General operating conditions. The provided curves are characterization results, not tested in production. High-speed internal (HSI16) RC oscillator VLSEH OSC32_IN input pin high level voltage - 0.7 VDDx -VDDx V VLSEL OSC32_IN input pin low level voltage -VSS - 0.3 VDDx tw(LSEH) tw(LSEL) OSC32_IN high or low time -250 - - ns ftolLSE Frequency tolerance Includes initial accuracy, stability over temperature, aging and frequency pulling -500 - +500 ppm 1. Guaranteed by design. Table 58. Low-speed external user clock characteristics(1) – Bypass mode Symbol Parameter Conditions Min Typ Max Unit Table 59. HSI16 oscillator characteristics(1) Symbol Parameter Conditions Min Typ Max Unit fHSI16 HSI16 Frequency VDD=3.0 V, TA=30 °C 15.88 - 16.08 MHz TRIM HSI16 user trimming step Trimming code is not a multiple of 64 0.2 0.3 0.4 % Trimming code is a multiple of 64 -4 -6 -8 DuCy(HSI16)(2) Duty Cycle - 45 - 55 ∆Temp(HSI16) HSI16 oscillator frequency drift over temperature TA= 0 to 85 °C -1 - 1 TA= -40 to 125 °C -2 - 1.5 ∆VDD(HSI16) HSI16 oscillator frequency drift over VDD VDD=1.62 V to 3.6 V -0.1 - 0.05 tsu(HSI16)(2) HSI16 oscillator start-up time - - 0.8 1.2 μs tstab(HSI16)(2) HSI16 oscillator stabilization time - - 3 5 IDD(HSI16)(2) HSI16 oscillator power consumption - - 155 190 μA 1. Guaranteed by characterization results. 2. Guaranteed by design. |
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