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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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STM32WB35CCU6ATR 데이터시트(PDF) 130 Page - STMicroelectronics |
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STM32WB35CCU6ATR 데이터시트(HTML) 130 Page - STMicroelectronics |
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130 / 193 page  Electrical characteristics STM32WB55xx STM32WB35xx 130/193 DS11929 Rev 10 6.3.13 Flash memory characteristics Table 65. Flash memory characteristics(1) 1. Guaranteed by design. Symbol Parameter Conditions Typ Max Unit tprog 64-bit programming time - 81.7 90.8 µs tprog_row One row (64 double word) programming time Normal programming 5.2 5.5 ms Fast programming 3.8 4.0 tprog_page One page (4 Kbytes) programming time Normal programming 41.8 43.0 Fast programming 30.4 31.0 tERASE Page (4 Kbytes) erase time - 22.0 24.5 tME Mass erase time - 22.1 25.0 IDD Average consumption from VDD Write mode 3.4 - mA Erase mode 3.4 - Table 66. Flash memory endurance and data retention Symbol Parameter Conditions Min(1) 1. Guaranteed by characterization results. Unit NEND Endurance TA = –40 to +105 °C 10 kcycles tRET Data retention 1 kcycle(2) at TA = 85 °C 2. Cycling performed over the whole temperature range. 30 Years 1 kcycle(2) at TA = 105 °C 15 1 kcycle(2) at TA = 125 °C 7 10 kcycles(2) at TA = 55 °C 30 10 kcycles(2) at TA = 85 °C 15 10 kcycles(2) at TA = 105 °C 10 |
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