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STM32WB35CCU6ATR 데이터시트(PDF) 131 Page - STMicroelectronics

부품명 STM32WB35CCU6ATR
상세설명  Multiprotocol wireless 32-bit MCU Arm®-based Cortex®-M4 with FPU, Bluetooth® 5 and 802.15.4 radio solution
PDF  193 Pages
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STM32WB35CCU6ATR 데이터시트(HTML) 131 Page - STMicroelectronics

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DS11929 Rev 10
131/193
STM32WB55xx STM32WB35xx
Electrical characteristics
169
6.3.14
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports).
the device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and
VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is
compliant with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 67. They are based on the EMS levels and classes
defined in application note AN1709 “EMC design guide for STM8, STM32 and Legacy
MCUs”, available on www.st.com.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flow must include the management of runaway conditions such as:
corrupted program counter
unexpected reset
critical data corruption (e.g. control registers)
Table 67. EMS characteristics
Symbol
Parameter
Conditions
Level/Class
VFESD
Voltage limits to be applied on any I/O pin
to induce a functional disturbance
VDD = 3.3 V, TA = +25 °C, 
fHCLK = 64 MHz,
conforming to IEC 61000-4-2
2B
VEFTB
Fast transient voltage burst limits to be
applied through 100 pF on VDD and VSS
pins to induce a functional disturbance
VDD = 3.3 V, TA = +25 °C, 
fHCLK = 64 MHz,
conforming to IEC 61000-4-4
5A



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