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TSC2012IDT 데이터시트(PDF) 31 Page - STMicroelectronics |
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TSC2012IDT 데이터시트(HTML) 31 Page - STMicroelectronics |
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31 / 54 page ![]() 5.5 Input offset voltage drift overtemperature The maximum input offset voltage drift overtemperature is defined as the offset variation related to the offset value measured at 25 °C. The signal chain accuracy at 25 °C can be compensated during production at application level. The maximum input voltage drift overtemperature enables the system designer to anticipate the effect of temperature variations. The maximum input voltage drift over temperature is computed using equation 3: ΔVioΔT=maxVioT −Vio25°C T−25°C (3) Where T = -40 °C and 125 °C. The TSC2011 datasheet maximum value is guaranteed by measurements on a representative sample size ensuring a Cpk (process capability index) greater than 1.3. TSC2010, TSC2011, TSC2012 Input offset voltage drift overtemperature DS13057 - Rev 4 page 31/54 |
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