KTA1663 datasheet(1/3 Pages) SKTECHNOLGY

부품명	KTA1663

상세설명	PNP-Silicon General use Transistors

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제조업체	SKTECHNOLGY [SHIKUES Electronics]

홈페이지	http://www.shikues.com

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Applications：Can be used for switching and amplifying in various

electrical and electronic circuit.

Maximum ratings

Parameters

Symbol

Rating

Unit

Collector-emitter voltage (IB=0)

VCEO

25

V

Collector-base voltage（IE=0）

VCBO

30

V

Emitter-base voltage（IC=0）

VEBO

6

V

Collector current

IC

1.5

A

Total

dissipation

power(TA=25℃)

*

Ptot

0.8

W

Junction temperature

Tjm

150

℃

Storage temperature

Tstg

-55～150

℃

* Device is mounted on a printed circuit board.

Electrical characteristics（Unless otherwise specified，TA=25℃）

Parameters

Symbol

Test condition

Min.

Max.

Unit

Collector-emitter breakdown voltage

V(BR)CEO

IC=2mA，IB=0

25

—

V

Collector-base breakdown voltage

V(BR)CBO

IC=100µA，IE=0

30

—

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100µA，IC=0

6

—

V

Forward current

transfer ratio

O

hFE

VCE=1V；IC=100mA

100

200

—

Y

160

320

—

Collector-base current

ICBO

VCB=35V，IE=0

—

100

nA

Collector-emitter saturation voltage

VCE（sat）

IC=800mA，IB=80mA

—

0.5

V

Characteristic frequency

fT

IC=50mA，VCE=10V，

f=100MHz

200

—

MHz

PNP-Silicon General use Transistors

0.8W、1.5A、25V

SOT-89

1

2

3

4

KTA1663

1 of 3

REV.08

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