Rev1.0, November 28, 2019

www.seoulsemicon.com

Product Data Sheet

SFW814AHA

4

표(Table) - 제목: Arial 10pt, 표 내부: Arial 8pt, 본문(Body)

– Arial 9pt

Performance Characteristics

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Forward

V

F

I

2.7

-

3.3

V

I

3.2

3.45

3.7

Turn on Voltage

V

TO

I

2.0

-

2.7

Reverse Voltage

V

R

Not designed for reverse condition.

Ф

v

I

250

260

340

lm

Color Temperature

CCT

I

4350

4700

5050

K

CRI

-

I

80

83

-

Viewing Angle

2



½

*3

X-axis

120

deg.

Y-axis

120

Thermal resistance

Rth

I

10

K/W

Table 2. Electro Optical Characteristics (T

Notes :

(1) Forward voltage measurement allowance is ±0.1V

(2)

Фv is total luminous flux output as measured with an integrating sphere.

Tolerance :

Фv ±10 %, VF ±0.1 V, Color Coordinate ±0.01, Pulse condition: t = 20ms

(3) 2

1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity.

Parameter

Symbol

Value

Unit

Power Dissipation

P

d

*1

3.8

W

DC Forward Current

I

F

350

mA

Peak Forward Current Pulsed

I

F pulse

*2*3

1000

mA

Operating Temperature

T

opr

-40 ~ +85

ºC

Storage Temperature

T

stg

-40 ~ +100

ºC

Junction Temperature

Tj max

135ºC / 150ºC Pulse

ºC

ESD Sensitivity (HBM)

-

2

KV

MSL Level

-

2a

-

Notes :

(1) Care is to be taken that power dissipation does not exceed the absolute maximum rating of the product.

(2) Peak pulsed forward current applies to T

(3) Maximum drive current depends on junction temperature.

Table 1. Absolute Maximum Ratings (T