3.

Description

The AT28C010 is a high‑performance Electrically Erasable and Programmable Read‑Only Memory (EEPROM).

Its 1‑Mb memory is organized as 131,072 words by 8 bits. Manufactured with Microchip’s advanced nonvolatile

CMOS technology, the device offers access times to 120 ns with power dissipation of just 440 mW. When the device

is deselected, the CMOS standby current is less than 300 µA.

The AT28C010 is accessed like a Static RAM for the read or write cycle without the need for external components.

The device contains a 128‑byte page register to allow writing of up to 128 bytes simultaneously. During a write cycle,

the address and 1 to 128 bytes of data are internally latched, freeing the address and data bus for other operations.

Following the initiation of a write cycle, the device will automatically write the latched data using an internal control

timer. The end of a write cycle can be detected by DATA Polling of I/O7. Once the end of a write cycle has been

detected, a new access for a read or write can begin.

The AT28C010 has additional features to ensure high quality and manufacturability. The device utilizes internal error

correction for extended endurance and improved data retention characteristics. An optional software data protection

mechanism is available to guard against inadvertent writes. The device also includes an extra 128 bytes of EEPROM

for device identification or tracking.

3.1

Block Diagram

V

CC

Y Decoder

Address

Inputs

X Decoder

Data Inputs/Outputs

Data Latch

Input/Output Buffers

Y-Gating

Cell Matrix

Identification

OE, CE and WE Logic

GND

OE

WE

CE

I/O0-I/O7

AT28C010

Description

DS20006311A-page 6