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AT28C010 데이터시트(PDF) 1 Page - Microchip Technology |
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AT28C010 데이터시트(HTML) 1 Page - Microchip Technology |
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1 / 31 page ![]() AT28C010 Military Grade 1-Mbit (131,072 x 8) Paged Parallel EEPROM Features • Fast Read Access Time: 120 ns • Automatic Page Write Operation: – Internally organized as 131,072 x 8 (1 Mbit) – Internal address and data latches for 128 bytes – Internal control timer • Fast Write Cycle Time: – Page Write cycle time: 10 ms maximum – 1 to 128-byte Page Write operation • Low-Power Dissipation: – 80 mA active current – 300 µA CMOS standby current • Hardware and Software Data Protection • DATA Polling for End of Write Detection • High Reliability CMOS Technology: – Endurance: 10,000 or 100,000 cycles – Data retention: 10 years • Single 5V ± 10% Supply • CMOS and TTL Compatible Inputs and Outputs • JEDEC ® Approved Byte-Wide Pinout Packages • 32-Lead CERDIP, 32-Lead Flatpack, 32-Lead CLCC and 30-Pin PGA © 2020 Microchip Technology Inc. DS20006311A-page 1 |
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