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ADPA7004CHIP-SX 데이터시트(PDF) 6 Page - Analog Devices |
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ADPA7004CHIP-SX 데이터시트(HTML) 6 Page - Analog Devices |
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6 / 20 page ![]() ADPA7004CHIPS Data Sheet Rev. 0 | Page 6 of 20 PIN CONFIGURATION AND FUNCTION DESCRIPTIONS RFOUT RFIN 1 8 16 15 14 12 11 10 9 13 2 3 4 6 7 5 ADPA7004CHIPS TOP VIEW (Not to Scale) Figure 2. Pad Configuration Table 7. Pad Function Descriptions Pad No. Mnemonic Description 1 RFIN RF Input. This pad is ac-coupled and matched to 50 Ω. See Figure 3 for the interface schematic. 2, 6 VGG1234A Gate Bias Voltage Pads for the First, Second, Third, and Fourth Stage Amplifiers. See Figure 4 for the interface schematic. 3, 4, 5, 7 VDD1A, VDD2A, VDD3A, VDD4A Top Edge Drain Bias Voltage Pads for the Amplifiers. External bypass capacitors are required on the VDD1A, VDD2A, VDD3A, and VDD4A pads. Connect the VDD1A, VDD2A, VDD3A, and VDD4A pads to a 3.5 V supply. See Figure 5 for the interface schematic. 8 RFOUT RF Output. This pad is ac-coupled and matched to 50 Ω. See Figure 9 for the interface schematic. 9 VDET DC Voltage Representing the RF Output Power. The voltage is rectified by the diode that is biased through external resistor. See Figure 9 for the interface schematic. 10 VREF Reference DC Voltage for the Temperature Compensation of the VDET diode. See Figure 10 for the interface schematic. 11, 13, 14, 15 VDD4B, VDD3B, VDD2B, VDD1B Bottom Edge Drain Bias Voltage Pads for Amplifiers. External bypass capacitors are required on the VDD4B, VDD3B, VDD2B, and VDD1B pads. Connect the VDD4B, VDD3B, VDD2B, and VDD1B pads to a 3.5 V supply. See Figure 7 for the interface schematic. 12, 16 VGG1234B Gate Bias Voltage Pads for the First, Second, Third, and Fourth Stage Amplifiers, Alternative Bias Configuration. See Figure 8 for the interface schematic. Die Bottom GND Ground. Die bottom must be connected to RF and dc ground. See Figure 6 for the interface schematic. |
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