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RFD10P03LSM 데이터시트(PDF) 1 Page - Harris Corporation

부품명 RFD10P03LSM
상세설명  10A, 30V, 0.200 ohm, Logic Level P-Channel Power MOSFET
PDF  12 Pages
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제조업체  HARRIS [Harris Corporation]
홈페이지  http://www.harris.com
Logo HARRIS - Harris Corporation

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SEMICONDUCT OR
1
May 1997
Features
• 10A, 30V
•rDS(ON) = 0.200Ω
Temperature Compensating PSPICE Model
• PSPICE Thermal Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
Formerly developmental type TA49205.
Description
These products are P-Channel power MOSFETs manufac-
tured using the MegaFET process. This process, which uses
feature sizes approaching those of LSI circuits, gives opti-
mum utilization of silicon, resulting in outstanding perfor-
mance. They were designed for use in applications such as
switching regulators, switching converters, motor drivers,
and relay drivers. These transistors can be operated directly
from integrated circuits.
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD10P03L
TO-251AA
10P03L
RFD10P03LSM
TO-252AA
10P03L
RFP10P03L
TO-220AB
F10P03L
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-252AA variant in tape and reel, i.e. RFD10P03LSM9A..
G
D
S
JEDEC TO-220AB
JEDEC TO-251AA
JEDEC TO-252AA
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
SOURCE
DRAIN (FLANGE)
GATE
DRAIN
GATE
SOURCE
DRAIN (FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
© Harris Corporation 1997
File Number
3515.1
RFD10P03L, RFD10P03LSM,
RFP10P03L
10A, 30V, 0.200
Ω, Logic Level
P-Channel Power MOSFET


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