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25N10L-TN3-R 데이터시트(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

부품명 25N10L-TN3-R
상세설명  N-Channel MOSFET uses advanced SGT technology
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제조업체  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
홈페이지  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

25N10L-TN3-R 데이터시트(HTML) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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—
3 —
Symbol
Parameter
Conditions
Min
Typ
Max
Units
VSD
Source-Drain Diode Forward Voltage
VGS=0V,IS=7A
---
---
V
trr
Continuous Source Current
---
---
ns
qrr
Pulsed Source Current
---
---
nC
Typical Characteristics： (T
C=25℃ unless otherwise noted)
-
ISD = 5 A
dlSD/dt = 100 A/μs
1.3
36
37
Note
1)
Calculated continuous current based on maximum allowable junction temperature.
2)
Repetitive rating; pulse width limited by max. junction temperature.
3)
Pd is based on max. junction temperature, using junction-case thermal resistance.
4)
VDD=50 V, RG=25 Ω, L=0.3 mH, starting Tj=25 °C.
5)
The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with Ta=25 °C.
0
2
4
6
8
10
0
8
16
24
32
40
48
56
5.5 V
T
j = 25 ℃
6 V
10 V
5 V
4 V
3.5 V
4.5 V
V
GS= 3V
V
DS, Drain-source voltage (V)
0
2
4
6
8
10
0.1
1
10
100
V
GS, Gate-source voltage(V)
V
DS= 10 V
T
j = 25 ℃
Figure 1, Typ. output characteristics
Figure 2 Typ. transfer characteristics
0
20
40
60
80
100
100
101
102
103
f
=100 KHz
V
GS = 0 V
V
DS, Drain-source voltage (V)
C
iss
C
oss
C
rss
0
1
2
3
4
5
6
7
0.0
2.5
5.0
7.5
10.0
I
D = 5 A
V
DS = 50 V
Q
g, Gate charge(nC)
Figure 3, Typ. capacitances
Figure 4, Typ. gate charge
25N10L-TN3-R



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