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25N10L-TN3-R 데이터시트(PDF) 4 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

부품명 25N10L-TN3-R
상세설명  N-Channel MOSFET uses advanced SGT technology
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제조업체  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
홈페이지  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

25N10L-TN3-R 데이터시트(HTML) 4 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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4
-50
0
50
100
150
100
105
110
115
120
T , Junction temperature (℃)
ID = 250 μA
VGS = 0 V
-50
0
50
100
150
25m
50m
75m
100m
I
D = 5 A
V
GS = 10 V
T
j, Junction Temperature (℃)
Figure 5, Drain-source breakdown voltage
Figure 6, Drain-source on-state resistance
-50
0
50
100
150
1.2
1.4
1.6
1.8
2.0
2.2
2.4
ID = 250 μA
Tj, Junction Temperature (℃)
0.0
0.4
0.8
1.2
1.6
2.0
0.1
1
10
100
T
j = 25 ℃
V
SD, Source-Drain voltage (V)
Figure 7, Threshold voltage
Figure 8, Forward characteristic of body diode
8
16
24
32
40
48
56
0
100m
200m
300m
400m
500m
5.5 V
10 V
5 V
4 V
4.5 V
V
GS=3.5 V
I
D, Drain current(A)
0
20
40
60
80
100
120
140
0
3
6
9
12
15
18
T
C, Case Temperature (℃)
Figure 9, Drain source on state resistance
Figure 10, Drain current
25N10L-TN3-R



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