| 전자부품 데이터시트 검색엔진 |
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LM6911 데이터시트(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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LM6911 데이터시트(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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2 / 5 page ![]() Electrical Characteristics (TJ=25℃ unless otherwise noted) Symbol Parameter Condition Min Typ Max Unit STATIC PARAMETERS BV DSS Drain-Source Breakdown Voltage V GS=0V ID=-250μA -60 V I DSS Zero Gate Voltage Drain Current V DS=-60V,VGS=0V 1 μA I GSS Gate-Body Leakage Current V GS=±20V,VDS=0V ±100 nA V GS(th) Gate Threshold Voltage V DS=VGS,ID=-250μA -1.0 -1.6 -2.5 V R DS(ON) Drain-Source On-State Resistance V GS=-10V, ID=-2A 160 190 mΩ V GS=-4.5V, ID=-1.5A 200 240 mΩ DYNAMIC PARAMETERS Clss Input Capacitance V DS=-30V,VGS=0V , F=1.0MHz 426 pF Coss Output Capacitance 35 pF Crss Reverse Transfer Capacitance 20 pF SWITCHING PARAMETERS td(on) Turn-on Delay Time VDS=-30V,ID=-1A , V GS=-10V, R G=6Ω 5.2 nS tr Turn-on Rise Time 19 nS td(off) Turn-Off Delay Time 35 nS tf Turn-Off Fall Time 10.6 nS Qg Total Gate Charge V DS=-30V,ID=-3A , VGS=-10V 5.2 nC Qgs Gate-Source Charge 19 nC Qgd Gate-Drain Charge 35 nC VSD Diode Forward Voltage VGS=0V,ISD=-1A 0.72 1.4 V Note: 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. LM6911 Rev 2.0 : www.leiditech.com 12.01.2019 2/5 |
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