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LM6911 데이터시트(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

부품명 LM6911
상세설명  These P-Channel enhancement mode power field effect transistors are using trench DMOS technology
PDF  5 Pages
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제조업체  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
홈페이지  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

LM6911 데이터시트(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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General Description
These P-Channel enhancement mode power field
effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored
to minimize on-state resistance, provide superior
switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These
devices are well suited for high efficiency fast switching
applications.
Features
VDS
ID
(at VGS=-10V)
RDS(ON) (at VGS=-10V)
-60V
-2A
190mΩ(Max)
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
-60
V
Gate-Source Voltage
VGS
±20
V
Drain Current-Continuous
TC=25°C
I
D
-2
A
TC=100°C
I
D
-1.25
A
Maximum Power Dissipation
P
D
1.56
W
Junction and Storage Temperature Range
T
J,TSTG
-55 To 150
℃
Thermal Characteristics
Parameter
Symbol
Typ
Max
Unit
Thermal Resistance junction-case
R
θJc
1.1
℃
/W
Thermal Resistance junction-to-Ambient
R
θJA
80
℃
/W
D
G
S
D
G
S
SOT23
IDM
Drain Current – Pulsed1
--8
A
LM6911
Rev 2.0 :
www.leiditech.com
12.01.2019
1/5


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