| 전자부품 데이터시트 검색엔진 |
|
UT70P03L-TN3-R 데이터시트(PDF) 4 Page - VBsemi Electronics Co.,Ltd |
|
|
|||||||||||||||||||||||||||||
UT70P03L-TN3-R 데이터시트(HTML) 4 Page - VBsemi Electronics Co.,Ltd |
|
4 / 8 page ![]() TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) On-Resistance vs. Junction Temperature Avalanche Current vs. Time 0 0.3 0.6 0.9 1.2 1.5 1.8 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) VGS = 10 V ID = 30 A tin (s) 1000 10 0.00001 0.001 0.1 1 100 0.01 0.0001 IAV (A) at TA = 25 °C IAV (A) at TA = 150 °C 1 0.1 Source-Drain Diode Forward Voltage Drain Source Breakdown vs. Junction Temperature 0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 100 10 1 TJ = 25 °C TJ = 150 °C 25 30 35 40 45 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) ID = 250 µA E-mail:China@VBsemi TEL:86-755-83251052 www.VBsemi.tw UT70P03L-TN3-R 4 |
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |