UT70P03L-TN3-R datasheet(2/8 Pages) VBSEMI

2 / 8 page

Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = - 250 µA

- 30

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 1

- 3

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = - 30 V, VGS = 0 V

- 1

µA

VDS = - 30 V, VGS = 0 V, TJ = 125 °C

- 50

VDS = - 30 V, VGS = 0 V, TJ = 175 °C

- 250

On-State Drain Currenta

ID(on)

VDS = -5 V, VGS = - 10 V

- 120

Drain-Source On-State Resistancea

RDS(on)

VGS = - 10 V, ID = - 30 A

0.009



VGS = - 10 V, ID = - 30 A, TJ = 125 °C

0.011

VGS = - 10 V, ID = - 30 A, TJ = 175 °C

0.013

VGS = - 4.5 V, ID = - 20 A

0.008

0.0

Forward Transconductancea

gfs

VDS = - 15 V, ID = - 75 A

Dynamicb

Input Capacitance

Ciss

VGS = 0 V, VDS = - 25 V, f = 1 MHz

9000

Output Capacitance

Coss

1565

Reversen Transfer Capacitance

Crss

715

Total Gate Chargec

VDS = - 15 V, VGS = - 10 V, ID = - 75 A

160

240

Gate-Source Chargec

Qgs

Gate-Drain Chargec

Qgd

Turn-On Delay Timec

td(on)

VDD = - 15 V, RL = 0.2 

ID  - 75 A, VGEN = - 10 V, Rg = 2.5 

Rise Timec

225

360

Turn-Off Delay Timec

td(off)

150

240

Fall Timec

210

340

Source-Drain Diode Ratings and Characteristicsb (TC = 25 °C)

Continuous Current

Pulsed Current

ISM

- 240

Forward Voltagea

VSD

IF = - 75 A, VGS = 0 V

- 1.2

- 1.5

Reverse Recovery Time

trr

IF = - 75 A, dI/dt = 100 A/µs

100

Peak Reverse Recovery Current

IRM(REC)

2.5

Reverse Recovery Charge

Qrr

0.07

0.25

µC

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www.VBsemi.tw

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