UTT31N10ML-TN3-R datasheet(3/4 Pages) DOINGTER

부품명	UTT31N10ML-TN3-R

상세설명	N-Channel MOSFET uses advanced SGT technology

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제조업체	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

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Gate Resistance

VGS=0V , VDS=0V , F-1MHz

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0.8

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Drain-Source Diode Characteristics

VSD

Source-Drain Diode Forward Voltage

VGS=0V,IS=1A,

TJ=25℃

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Continuous Source Current

VG=VD=0V , Force Current

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130

ISM

Pulsed Source Current

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260

trr

Reverse Recovery Time

VR=100 V,IS=10 A,

di/dt=100 A/μs

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qrr

Reverse Recovery Charge

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164

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Notes:

Typical Characteristics： (TC=25℃ unless otherwise noted)

Repetitive Rating : Pulsed width limited by maximum junction temperature.

VDD=50V,L=0.1mH,IAS=39A.,RG=25

Ω,Starting TJ=25℃.

The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%.

Essentially independent of operating temperature.

Fig.1

Continuous Drain Current vs. T

Fig.2

Normalized RDSON vs. TJ

Fig.3

Normalized Vth vs. TJ

Fig. 4 Gate Charge Characteristics

TC , Case Temperature (

℃)

TJ , Junction Temperature (

℃)

TJ , Junction Temperature (

℃)

Qg , Gate Charge (nC)

TJ=25℃

UTT31N10ML-TN3-R

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