UTT31N10ML-TN3-R datasheet(1/4 Pages) DOINGTER

부품명	UTT31N10ML-TN3-R

상세설명	N-Channel MOSFET uses advanced SGT technology

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Description：

This N-Channel MOSFET uses advanced SGT technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=100V,ID=36A,RDS(ON)<24mΩ@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra Iow RDS(ON).

5) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(TC=25℃ unless otherwise noted)

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

100

V

VGS

Gate-Source Voltage

±

20

V

ID

Continuous Drain Current (TC=25℃)

36

A

Continuous Drain Current(TC=100℃)

18

A

IDM

Drain Current-Pulsed1

112

A

EAS

Single pulsed avalanche energy2

76

mJ

IAS

Single Pulse Avalanche Current2

39

A

PD

Power Dissipation (TC=25℃)

53

W

Power Dissipation-Derate above 25℃

0.42

W/℃

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

℃

Thermal Characteristics：

Symbol

Parameter

Max

Units

RƟJC

Thermal Resistance,Junction to Case

2.37

℃

/W

D

S

G

UTT31N10ML-TN3-R

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