High Power, 88 W Peak, Silicon SPDT,

Reflective Switch, 0.7 GHz to 4.0 GHz

Data Sheet

ADRF5160

Rev. 0

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FEATURES

Reflective, 50 Ω design

Low insertion loss: 0.7 dB typical to 2.0 GHz

Long-term (>10 years) average

CW power: 43 dBm

Peak power: 49 dBm

LTE average power (8 dB PAR): 41 dBm

Single event (<10 sec) average

LTE average power (8 dB PAR): 44 dBm

High linearity

P0.1dB: 47 dBm typical

IP3: 70 dBm typical

ESD ratings

HBM: 4 kV, Class 3A

CDM: 1.25 kV

Single positive supply: 5 V

Positive control, CMOS/TTL compatible

32-lead, 5 mm × 5 mm LFCSP package

APPLICATIONS

Wireless infrastructure

Military and high reliability applications

Test equipment

Pin diode replacement

FUNCTIONAL BLOCK DIAGRAM

ADRF5160

PACKAGE

BASE

GND

GND

RFC

RF2

RF1

Figure 1.

GENERAL DESCRIPTION

The ADRF5160 is a silicon-based, high power, 0.7 GHz to

4.0 GHz, silicon, single-pole, double-throw (SPDT) reflective

switch in a leadless, surface-mount package. The switch is ideal

for high power and cellular infrastructure applications, such as

long-term evolution (LTE) base stations. The ADRF5160 has

high power handling of 41 dBm (8 dB PAR LTE, long-term

(>10 years) average typical), a low insertion loss of 0.7 dB typical

to 2.0 GHz, an input third-order intercept (IP3) of 70 dBm

(typical), and a 0.1 dB compression point (P0.1dB) of 47 dBm.

On-chip circuitry operates at a single positive supply voltage of

5 V at a typical supply current of 1.1 mA, making the ADRF5160

an ideal alternative to pin diode-based switches.

The ADRF5160 comes in an RoHS compliant, compact, 32-lead,

5 mm × 5 mm LFCSP.