| 전자부품 데이터시트 검색엔진 |
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TSU112IYQ3T 데이터시트(PDF) 22 Page - STMicroelectronics |
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TSU112IYQ3T 데이터시트(HTML) 22 Page - STMicroelectronics |
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22 / 32 page ![]() 5.9 EMI robustness of nanopower devices Nanopower devices exhibit higher impedance nodes and consequently they are more sensitive to EMI. To improve the natural robustness of the TSU112IY device, we recommend to add three capacitors of around 22 pF each between the two inputs, and between each input and ground. These capacitors lower the impedance of the input at high frequencies and therefore reduce the impact of the radiation TSU112IY EMI robustness of nanopower devices DS13616 - Rev 1 page 22/32 |
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